教师课堂教学质量的多元统计分析

应用多元统计分析中的聚类分析法和主成分分析法对教师高等数学的课堂教学质量进行了统计分析,通过对数据的聚类分析结果提出教师应注重启发性教学并善于引导学生解决实际问题.同时利用主成分分析将原先众多的评价指标用三个指标代替,为进一步提高教学质量提供科学的依据.     

应用物理类专业电磁学课程教学内容改革

应用物理类专业的培养目标是培养物理学应用型人才，物理学应用型人才是具备实验物理学家和工程师双重素质的复合型人才，物理学应用型人才应着重技术创新和应用能力的培养，应编写区别于物理学专业的、适应应用物理类专业特点的课程教材，应用物理类专业《电磁学》教材遵循电磁理论发展顺序的体系能体现理论发展的规律，符合普通物理的特点、要求和教学目标，文章论述了应用物理类专业课程教学内容改革的指导思想，介绍了我国第一套适应应用物理专业的面向21世纪的《电磁学》教材的特点。     

三个不同领域实际问题相结合的教学方法探讨

通过建立肿瘤增长动力学模型,研究肿瘤增长动态规律时发现:肿瘤增长的全过程与龚珀兹增长曲线描述的经济增长过程完全相符;进一步给出了龚珀兹增长曲线与描述种群的增长与调节的逻辑斯蒂增长曲线完全相似.将上述三个属性完全不同的实际应用问题打包传授给学生的授课方法是有别于孤立地介绍三个具体问题的,学生的学习效果也会不同.     

A supramolecular hydrogen‐bonded complex between 1,3,5‐tris(diisobutylhydroxysilyl)benzene and trans‐bis(4‐pyridyl)ethylene

The trisilanol 1,3,5‐(HOi‐Bu₂Si)₃C₆H₃ ( 7 ), prepared in three steps from 1,3,5‐tribromobenzene via the intermediates 1,3,5‐(Hi‐Bu₂Si)₃C₆H₃ ( 8 ) and 1,3,5‐(Cli‐Bu₂Si)₃C₆H₃ ( 9 ) forms an equimolar complex with trans‐bis(4‐pyridyl)ethylene (bpe), 7 ·bpe, whose structure was investigated by X‐ray crystallography. The hydrogen‐bonded network features a number of SiO? H(H)Si and SiO? H hydrogen bridges. Evidence was found for cooperative strengthening within the sequential hydrogen bonds. Copyright © 2007 John Wiley & Sons, Ltd.     

新课标体系下高师本科数学分析教学所面临的问题和所采取的措施

从三个方面讨论了在高中新课标体系下高师本科数学分析教学所面临的问题,并结合作者的实际教学经验给出了一些具有实际操作意义的解决措施和办法.     

牛顿环中心暗斑大小对测量结果影响的研究

本文分析了牛顿环中心暗斑大小对测量结果的影响,并给出了解决方法。     

The electronic structure of the interface between thin conjugated oligomer films and inorganic substrates with different work function

In this work, a comparison of the interfacial electronic properties between a semiconducting oligomer and a variety of substrates with different properties—metal, semiconductor and oxide layers—is reported. The interface formation was studied by X-ray and Ultraviolet photoelectron spectroscopies (XPS, UPS). High purity oligomer films with thickness up to 10 nm were prepared by stepwise evaporation on the clean substrates under ultrahigh vacuum (UHV) conditions. Analysis of the oligomer and substrate related XPS spectra clarified the interfacial chemistry and band bending in the semiconducting materials. The valence band structure and the interfacial dipoles were determined by UPS. The barriers for hole injection were measured at the interfaces of the organic film with all substrates. The interfacial energy band diagrams were deduced in all cases from the combination of XPS and UPS results. Emphasis was given on the influence of the substrate work function (eΦ) on the electronic properties of these interfaces.     

大学物理实验教学的认识与体会

本文结合工作实际介绍了大学物理实验教学的认识与体会。     

The epitaxial sexiphenyl (0 0 1) monolayer on TiO2(1 1 0): A grazing incidence X-ray diffraction study

A para-sexiphenyl monolayer of near up-right standing molecules (nominal thickness of 30 Å) is investigated in-situ by X-ray diffraction using synchrotron radiation and ex-situ by atomic force microscopy. A terrace like morphology is observed, the step height between the terraces is approximately one molecular length. The monolayer terraces, larger than 20 μm in size, are extended along the [0 0 1] direction of the TiO₂(1 1 0) substrate i.e. along the Ti-O rows of the reconstructed substrate surface. The structure of the monolayer and its epitaxial relationship to the substrate is determined by grazing incidence X-ray diffraction. Extremely sharp diffraction peaks reveal high crystalline order within the monolayer, which was found to have the bulk structure of sexiphenyl. The monolayer terraces are epitaxially oriented with the (0 0 1) plane parallel to the substrate surface (out-of-plane order). Four epitaxial relationships are observed. This in-plane alignment is determined by the arrangement of the terminal phenyl rings of the sexiphenyl molecules parallel to the oxygen rows of the substrate.     

Correlated and non-correlated growth kinetics of pentacene in the sub-monolayer regime

We present a study of the growth kinetics of pentacene monolayer islands on SiO₂ in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG), have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size 〈A〉 scales with deposition time t i.e. 〈A〉 ∝ t whereas for non-correlated growth, 〈A〉 ∝ t². The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width λ_D (λ_D is the mean diffusion distance on SiO₂ before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes.